The objective of this thesis is to analyze the characteristics of gate-all-around (GAA) field-effect-transistors (FETs) based on BSIM-CMG ... Show moreThe objective of this thesis is to analyze the characteristics of gate-all-around (GAA) field-effect-transistors (FETs) based on BSIM-CMG (Berkeley Short-channel IGFET Model Common Multi-Gate) compact model. As devices continue scaling according to Moore’s Law, traditional planar multi-gated MOSFET cannot suppress the short-channel effects (SCE). The GAA FETs structure is a good candidate for sub-7nm technology nodes because of its’ electrostatic gate control and the ability to suppress the SCE. In this thesis, two different kinds of GAA FETs, Lateral GAA FETs (LGAA FETs) and Vertical GAA FETs (VGAA FETs), are characterized and compared with multi-gate FinFETs. The devices implemented in this thesis are all based on BSIM-CMG compact models from Berkeley BSIM Group and PTM-MG compact models from Nanoscale Integration and Modeling (NIMO) Group. In this dissertation, LGAA FETs and VGAA FETs are compared with double-gate FinFETs, triple-gate FinFETs and quadruple-gate FinFETs. Firstly, both N-type and P-type of devices are characterized for a variety of parameters to investigate their properties. Then basic logic gates, i.e. Inverter, NOR and NAND, are created based on GAA FETs and multi-gate FinFETs, and simulated for comparison. Finally, an extended datapath study was done by implementing several full adder designs, including the traditional 28T mirror adder, the 9A adder, the 13A adder, the SERF adder, the CLRCL adder, the HULPFA adder, and the ULPFA adder. Simulation results confirm that LGAA FETs and VGAA FETs have substantially smaller leakage current and dynamic power consumption but slightly increased delay when compared with traditional planar multi-gate FinFETs.comparison. Finally, an extended datapath study was done by implementing several full adder designs, including the traditional 28T mirror adder, the 9A adder, the 13A adder, the SERF adder, the CLRCL adder, the HULPFA adder, and the ULPFA adder. Simulation results confirm that LGAA FETs and VGAA FETs have substantially smaller leakage current and dynamic power consumption but slightly increased delay when compared with traditional planar multi-gate FinFETs. M.S. in Electrical Engineering, May 2018 Show less
