The indium monoiodide (InI) semiconductor is a promising candidate for Gamma-ray and X-ray radiation detector devices. The high atomic number... Show moreThe indium monoiodide (InI) semiconductor is a promising candidate for Gamma-ray and X-ray radiation detector devices. The high atomic number of indium (In) and iodine (I), along with high density, give the InI detector a higher photon stopping power (attenuation coe cient) compared to germanium based detectors and comparable to that of CdT e. Based on the previous research on melt synthesis and vapor synthesis by Dr. Ostrogorsky at Rensselaer Polytechnic Institute (RPI) and Dr. Burger at Fisk University from 2006 to 2009, the present work improves the purity of indium monoiodide by demonstrating the e ciency of zone re ning of this material. A segregation coe cient study is presented based on a Glow Discharge Mass Spectrometry (GDMS) and an Instrumental Gas Analysis (IGA) analyses performed by Evans Analytical Group (EAG). Two indium monoiodide crystals were grown using the Vertical Bridgman technique and analyses done on one of the crystals shown a resistivity of 3 109 .cm which is the second highest value reported. Indium monoiodide synthesized and puri ed in this current study was used to grow several Czochralski crystals. M.S. in Mechanical, Materials, and Aerospace Engineering, May 2012 Show less
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