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INVESTIGATION OF STRUCTURE AND PROCESSING EFFECTS ON THE ELECTROCHEMICAL PERFORMANCE OF COBALT-FREE, LITHIUM- AND MANGANESE-RICH LAYERED OXIDE CATHODE FOR LIBS
Title
INVESTIGATION OF STRUCTURE AND PROCESSING EFFECTS ON THE ELECTROCHEMICAL PERFORMANCE OF COBALT-FREE, LITHIUM- AND MANGANESE-RICH LAYERED OXIDE CATHODE FOR LIBS
Creator
Kucuk, Kamil
Date
2021
Description
Rechargeable Li-ion batteries (LIBs) have been widely used in a diverse range of energy storage systems because of their high energy and power...
Show moreRechargeable Li-ion batteries (LIBs) have been widely used in a diverse range of energy storage systems because of their high energy and power density, low self-discharge, and tolerable memory effect, compared to the conventional alkaline, lead acid, and nickel-cadmium (Ni/Cd) batteries. [2] Since not only cathodes materials control the energy density of a cell, but also the capacity of cathode material characteristically restricts the cell capacity (as well as about 40% of the cell cost results from the cost of cathode raw materials), the majority of studies on LIBs have been carried out on developing alternative cathodes with higher energy, lower cost, and more environmentally friendliness. [2], [3] From this perspective, both Co-free and lithium- & manganese-rich (LMRO) layered oxide MNF cathodes, Li1.2(MnxNiyFez)O2, have recently attracted great attention in lithium-ion battery (LIB) research for electric vehicles and energy storage devices due to their high capacities of over 250 mAhg−1 and being eco-friendly and inexpensive compared to the cobalt-based Li-rich Li1.2(NixMnyCoz)O2 and Ni-rich Li(NixMnyCoz)O2 (NMC), and LiCoO2 commercial cathodes. Replacing toxic and expensive Co in the LMRO cathodes with environmentally friendly and much cheaper Fe element has been extensively studied over the last two decades. It was suggested by Aryal, S. et. al., in 2018. [4] that the Li1.2(Mn0.50Ni0.20Fe0.10)O2 (MNF502010) Co-free LMRO MNF cathodes seem better in terms of capacity-retention with higher discharge capacity and less voltage fade compared to other MNF compositions. However, the MNF502010 cathode still suffers from its lower experimental capacity, compared to its expected theoretical capacity (270-455 mAhg−1), as well as capacity decay, voltage fade, poor rate capability, and thermal instability. In this dissertation, it is reported that comparable specific discharge capacity with less amount of voltage fading and capacity decay can be achieved by fluorine doping, synthesizing materials in large amounts (0.1 mol synthesis at least) with two-step firing, and then washing the obtained nanocomposites with H3PO4 to create Li3PO4 layer on the surface of bulk MNF composites. The specific discharge capacity and cycling performance of the Co-free MNF502010 cathodes were studied and enhanced by using and optimizing these approaches in this work for the first time. However, voltage fading and capacity decay are still remaining challenges, even if they are remarkably mitigated by applying these approaches. Structural changes due to layered to spinel transformation, less amount of monoclinic phase activation leading to structural deformation occurring after 1st charge, dissolution of the transition metals (TM), and oxygen release (loss of lattice oxygen) from the MNF material upon following electrochemical cycling at higher voltage (≥ 4.5V ) seem the main reasons behind these challenges, specifically the voltage fading and capacity decay.A series of fluorine-doped/undoped, Co-free MNF502010 nanocomposite cathode materials (Li1.2(Mn0.50Ni0.20Fe0.10)O2(1−x)F2x, briefly F-doped MNF) were synthesized by using a sol-gel technique. Firstly (Chapter 4), the fluorine was substituted for oxygen in the parent MNF compound in different fractions (0.00, 0.025, 0.05,0.075, 0.10, which means 0%, 2.5%, 5.0%, 7.5%, and 10%), in order to optimize the amount of fluorine for better performance; secondly (Chapter 5), a large batch (0.1mol, 10 times more than the previous batch) of 5%F-doped material was prepared by a modified sol-gel synthesis which is modified by heating at 700 ◦C for different time-periods; 7.5 hours (7.5h), 15 hours (15h, two-step firing, 7.5h + rest for 12h + 7.5h), instead of heating directly 15 hours (d15h), as done in the first chapter; finally (Chapter 6), H3PO4 treatment resulting in a non-uniform Li3PO4 layer on the bulk surface. These approaches were respectively applied on doped/undoped MNF502010 nano-composites, in order to overcome the challenges already mentioned above. Finally, the effects of these approaches on the structural, morphological, and electrochemical properties of MNF cathode materials were investigated by means of powder X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive X-ray (EDS) analysis, X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge cycling, and X-ray absorption spectroscopy (XAS, an element specific probe technique). Specifically, ex-situ XAS was performed at the Mn, Ni, and Fe K-edge and used to detect the changes both in the oxidation state of the transition metal (TM) ions and their local environments in order to get a better understanding of the improved performance of the composite materials, as well as their failure mechanism. Moreover, the EXAFS data were modeled to gain insight into the influence of these approaches on the electrochemical performance of both pristine (uncycled) and cycled electrodes (after the 100th discharge). From correlating the electrochemical performance of the modified/unmodified MNF nano-composite cathodes to their XANES and EXAFS analysis, the ability to achieve higher specific capacity is strongly dependent on the formation of a well-ordered layered structure and the amount of monoclinic component (Li2MnO3) activation resulting in higher redox-activity of the Mn cations. The long-term cyclability or capacity retention can be enhanced by heating the resulting powders with a two-step firing (instead of directly 15 hours) and washing them with 1wt%H3PO4 solution to create a Li3PO4 conductive and protective layer.
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FIELD EMISSION MITIGATION VIA IN-SITU PLASMA PROCESSING IN 1.3 GIGAHERTZ 9-CELL LCLS-II CAVITIES
Title
FIELD EMISSION MITIGATION VIA IN-SITU PLASMA PROCESSING IN 1.3 GIGAHERTZ 9-CELL LCLS-II CAVITIES
Creator
Giaccone, Bianca
Date
2021
Description
Field emission (FE) is one of the limiting factors in superconducting radiofrequency cavities' performance. It is known that even a few...
Show moreField emission (FE) is one of the limiting factors in superconducting radiofrequency cavities' performance. It is known that even a few monolayers of surface adsorbed contaminants can lower the niobium work function and increase the FE. In order to address the field emission that may arise once the accelerator is already assembled, it was decided to develop plasma processing for the Linac Coherent Light Source II, a method to mitigate field emission in-situ. Starting from Doleans's successful experience with plasma processing for high beta cavities, Fermi National Accelerator Laboratory is developing plasma cleaning for TESLA shaped 1.3 GHz 9-cell cavities. A new method of ignition based on the higher order modes and couplers was developed, along with a detection procedure that allows to identify the location of the plasma inside the cavity. In this work are presented the results of plasma processing applied to 1.3 GHz cavities, both single-cell and 9-cells. The cavities were contaminated with multiple sources, naturally or artificially, and their performance was measured through cryogenic RF tests before and after plasma cleaning. These experiments proved that plasma processing successfully removed hydrocarbon-related field emission from cavities artificially contaminated, but also from a cavity with natural and unknown FE source. In some cases of more extreme contamination through vacuum failure simulation conducted in air (not in a cleanroom), plasma processing was not able to recover the cavity's performance. An ongoing analysis of the cavity contaminants is presented here, explaining the reason why some contaminated cavities showed little improvement after plasma processing. A microscopic study of the effect of plasma processing on the niobium surface is also presented. Niobium samples prepared with different surface treatments were analyzed using X-ray photoelectron spectroscopy, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The samples were subjected to plasma processing and analyzed again, in order to draw a comparison and identify possible surface changes caused by the reactive oxygen contained in the glow discharge. The samples were prepared with different surface treatments in order to understand if plasma processing may affect them differently. This study showed a possible increase in the oxide thickness after plasma processing and a reduction of the energy difference between the pentoxide and the metal peaks. In preparation for this study, the near-surface region of one niobium sample was investigated with X-ray photoelectron spectroscopy at various steps of sputtering and subsequent oxide regrowth in air. The results showed that the majority of the oxide is composed of Nb2O5, however, the presence of two suboxides (NbO, NbO2) is observed, plus an additional peak (attributed to Nb2O) measured both during sputtering and oxide regrowth.
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Using Niobium surface encapsulation and Rhenium to enhance the coherence of superconducting devices
Title
Using Niobium surface encapsulation and Rhenium to enhance the coherence of superconducting devices
Creator
Crisa, Francesco
Date
2024
Description
In recent decades, the scientific community has grappled with escalating complexity, necessitating a more advanced tool capable of tackling...
Show moreIn recent decades, the scientific community has grappled with escalating complexity, necessitating a more advanced tool capable of tackling increasingly intricate simulations beyond the capabilities of classical computers. This tool, known as a quantum computer, features processors composed of individual units termed qubits. While various methods exist for constructing qubits, superconducting circuits have emerged as a leading approach, owing to their parallels with semiconductor technology.In recent years, significant strides have been made in optimizing the geometry and design of qubits. However, the current bottleneck in the performance of superconducting qubits lies in the presence of defects and impurities within the materials used. Niobium, owing to its desirable properties, such as high critical temperature and low kinetic inductance, stands out as the most prevalent superconducting material. Nonetheless, it is encumbered by a relatively thick oxide layer (approximately 5 nm) exhibiting three distinct oxidation states: NbO, NbO$_2$, and Nb$_2$O$_5$. The primary challenge with niobium lies in the multitude of defects localized within the highly disordered Nb$_2$O$_5$ layer and at the interfaces between the different oxides. In this study, I present an encapsulation strategy aimed at restraining surface oxide growth by depositing a thin layer (5 to 10 nm) of another material in vacuum atop the Nb thin film. This approach exploits the superconducting proximity effect, and it was successfully employed in the development of Josephson junction devices on Nb during the 1980s.In the past two years, tantalum and titanium nitride have emerged as promising alternative materials, with breakthrough qubit publications showcasing coherence times five to ten times superior to those achieved in Nb. The focus will be on the fabrication and RF testing of Nb-based qubits with Ta and Au capping layers. With Ta capping, we have achieved the best T1 (not average) decay time of nearly 600 us, which is more than a factor of 10 improvements over the bare Nb. This establishes the unique capping layer approach as a significant new direction for the development of superconducting qubits.Concurrently with the exploration of materials for encapsulation strategies, identifying materials conducive to enhancing the performance of superconducting qubits is imperative. Ideal candidates should exhibit a thin, low-loss surface oxide and establish a clean interface with the substrate, thereby minimizing defects and potential sources of losses. Rhenium, characterized by an extremely thin surface oxide (less than 1 nm) and nearly perfect crystal structure alignment with commonly used substrates such as sapphire, emerges as a promising material platform poised to elevate the performance of superconducting qubits.
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Using Niobium surface encapsulation and Rhenium to enhance the coherence of superconducting devices
Title
Using Niobium surface encapsulation and Rhenium to enhance the coherence of superconducting devices
Creator
Crisa, Francesco
Date
2024
Description
In recent decades, the scientific community has grappled with escalating complexity, necessitating a more advanced tool capable of tackling...
Show moreIn recent decades, the scientific community has grappled with escalating complexity, necessitating a more advanced tool capable of tackling increasingly intricate simulations beyond the capabilities of classical computers. This tool, known as a quantum computer, features processors composed of individual units termed qubits. While various methods exist for constructing qubits, superconducting circuits have emerged as a leading approach, owing to their parallels with semiconductor technology.In recent years, significant strides have been made in optimizing the geometry and design of qubits. However, the current bottleneck in the performance of superconducting qubits lies in the presence of defects and impurities within the materials used. Niobium, owing to its desirable properties, such as high critical temperature and low kinetic inductance, stands out as the most prevalent superconducting material. Nonetheless, it is encumbered by a relatively thick oxide layer (approximately 5 nm) exhibiting three distinct oxidation states: NbO, NbO$_2$, and Nb$_2$O$_5$. The primary challenge with niobium lies in the multitude of defects localized within the highly disordered Nb$_2$O$_5$ layer and at the interfaces between the different oxides. In this study, I present an encapsulation strategy aimed at restraining surface oxide growth by depositing a thin layer (5 to 10 nm) of another material in vacuum atop the Nb thin film. This approach exploits the superconducting proximity effect, and it was successfully employed in the development of Josephson junction devices on Nb during the 1980s.In the past two years, tantalum and titanium nitride have emerged as promising alternative materials, with breakthrough qubit publications showcasing coherence times five to ten times superior to those achieved in Nb. The focus will be on the fabrication and RF testing of Nb-based qubits with Ta and Au capping layers. With Ta capping, we have achieved the best T1 (not average) decay time of nearly 600 us, which is more than a factor of 10 improvements over the bare Nb. This establishes the unique capping layer approach as a significant new direction for the development of superconducting qubits.Concurrently with the exploration of materials for encapsulation strategies, identifying materials conducive to enhancing the performance of superconducting qubits is imperative. Ideal candidates should exhibit a thin, low-loss surface oxide and establish a clean interface with the substrate, thereby minimizing defects and potential sources of losses. Rhenium, characterized by an extremely thin surface oxide (less than 1 nm) and nearly perfect crystal structure alignment with commonly used substrates such as sapphire, emerges as a promising material platform poised to elevate the performance of superconducting qubits.
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