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Polarization Induced by A Terahertz Electric Field in A Semiconductor Nanodimer in the Overlapping Regime
Title
Polarization Induced by A Terahertz Electric Field in A Semiconductor Nanodimer in the Overlapping Regime
Creator
Wang, Zi
Date
2023
Description
Boltzmann transport equation is a theoretical framework for the description of thermodynamics or charge reactions in a system not in...
Show moreBoltzmann transport equation is a theoretical framework for the description of thermodynamics or charge reactions in a system not in equilibrium, which can be applied to the analysis of the interactions of mobile charges with an electromagnetic wave. When the dimensions of the object are small compared to the wavelength, the induced dipole moment provides a means to characterize the collective response while providing insight to the nature of the charge-field interactions. Semiconductor nanoparticles exhibit surface plasmon resonance in the terahertz frequency range and are of current interest for the development of components and circuits in that part of the electromagnetic spectrum. By changing the plasmon frequencies of doped semiconductors through the change of carrier concentration, new opportunities arise for plasmonic manipulation in terahertz region leading to various promising applications. Despite the Drude model's long-term success and convenience in describing the electrical conductivity of metals in terms of dielectric functions, some aspects of polarization are not accounted for by bulk properties. By incorporating the transport equations of the charge carriers with Maxwell's equations, screening effects of charge carriers can be accounted for, enabling the internal field, space charge and induced dipole moment of a semiconductor nanoparticle to be studied.The computations performed for elementary dimer structures in overlapping cases revealed the internal field screening, while the complex dipole moments show dispersion and absorption effects. The numerical algorithms are implemented using the finite element method to investigate the surface plasmon resonance (SPR) induced on the semiconductor particles. Unique SPR modes evolution is observed as the thickness of the overlap region is varied. The characteristics can be interpreted by the migration of local space charge as the level of overlap is varied. This degree of freedom provided by a semiconductor nanodimer could be employed to control the local field near a simple cluster of nanoparticles, with potential for application in sensing and circuit components in the terahertz frequency range.
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ATOMIC LAYER DEPOSITION STUDIES OF GOLD AND TUNGSTEN DISULFIDE
Title
ATOMIC LAYER DEPOSITION STUDIES OF GOLD AND TUNGSTEN DISULFIDE
Creator
Liu, Pengfei
Date
2020
Description
In the last few decades, atomic layer deposition (ALD), as a vapor deposition technique and a powerful thin film fabrication method, has...
Show moreIn the last few decades, atomic layer deposition (ALD), as a vapor deposition technique and a powerful thin film fabrication method, has received more and more attention in many fields. A variety of materials can be made by ALD; however, the progress of ALD application is still necessary. Meanwhile, in the process of film fabrication by ALD, the interfacial chemistry is interesting and well worth studying. This dissertation mainly described the process of exploring two materials, gold and tungsten disulfide, fabrication and related content.For the portion of applying ALD in gold thin film deposition, a relatively comprehensive process was explored, studied, analyzed and discussed. Start with the synthesis of the gold precursor, Me2Au(S2CNEt2), the synthetic reaction was explored. By modified the conditions, such as solvent system, twice the yield as previously reported in the literature were achieved. Next, the application of in situ microbalance and infrared spectroscopic technique illuminate the organometallic chemistry during the gold thermal ALD process with Me2Au(S2CNEt2) and ozone. In situ quartz crystal microbalance (QCM) studies give an explanation for the nucleation delay and island growth of gold on a freshly prepared aluminum oxide surface. In situ infrared spectroscopy provides insight to study the surface chemistry during the process, which supports an oxidized gold surface mechanism. The epitaxy of gold thin film was explored by X-ray diffraction. The thermal ALD gold on various substrates reveals out-of-plane orientation, however, in-plane orientation was only existed in the gold film on mica. For the portion of applying ALD in tungsten disulfide fabrication, the early work started with studying the effect of interfaces upon crystallinity. The sulfuration of indium thin film with different interface was explored. Then the idea of “interfaces” was brought into the process of tungsten compounds fabrication. Due to this “indirect” method which made tungsten disulfide by sulfurizing ALD made tungsten compounds (eg. tungsten oxide and tungsten nitride) could not reduce the reaction temperature of tungsten disulfide synthesis to less than 400 °C. Sequently, the “direct” way of tungsten disulfide fabrication which directly utilized tungsten precursor and H2S in ALD system was tested and explored. With the tungsten precursors developed by our group, finally, tungsten disulfide could be fabricated at the temperature as low as 125 °C.
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