Search results

(1 - 1 of 1)
SYNTHESIS AND APPLICATION OF ORGANOMETALLIC PRECURSORS FOR TUNGSTEN AND MOLYBDENUM SULFIDE
Title
SYNTHESIS AND APPLICATION OF ORGANOMETALLIC PRECURSORS FOR TUNGSTEN AND MOLYBDENUM SULFIDE
Creator
Liu, Bo
Date
2021
Description
Transition metal chalcogenides (TMCs) have unique properties. They are promising materials for the next generation electrical devices due to...
Show moreTransition metal chalcogenides (TMCs) have unique properties. They are promising materials for the next generation electrical devices due to their suitable band gap, outstanding electron mobility, and controllable atomic thickness. In the last few decades, atomic layer deposition (ALD) has been one of the hottest research frontiers for the fabrication of TMCs films. Signification progress has been made on the varieties of material grown by ALD and the improvement of ALD equipment. However, the fast-evolving microelectronic industry set higher requirements for the ALD application. In the potential electronic fabrication process, low-temperature preparation and non-corrosive procedure are critical for the advanced device architecture. Thus the novel precursor development and the investigation of reaction mechanism are necessary. In addition, as the comprehensive research of film deposition, the prevailing crystallographic defects on the as-prepared films are another appealing thing for us to think about and try to eliminate for better film quality. Therefore, this dissertation will describe the precursor ligand design and its effect on the morphology, the development of W/Mo precursors for tungsten/molybdenum disulfide, and the defect passivation of tungsten diselenide films.In chapter 2, a series of heteroleptic tungsten precursors of tetrathiotungstates (WS42-) were prepared through the facile ligand transfer method. Ligand variation has a significant effect on the crystallinity of the resulting tetrathiotungstate products. Crystalline tetrathiotungstates with preferred orientation were prepared from the reaction of synthesized precursors with H2S at room temperature. Results indicated the morphologies and crystallinities of the tetrathiotungstates can be well controlled by their ligand behaviors which give us a better understanding of the growth mechanism. Chapters 3 and 4 focus on the development of W and Mo precursors for W/Mo disulfide and their performance in wet chemistry reactions and ALD. WS2 can be synthesized at the ambient temperature in solution by the non-redox reaction. WS2 film growth can be achieved at the exciting low temperature of 125°C by ALD. Based on the performance of the tungsten precursor, a new molybdenum dimer precursor with improved reactivity was synthesized, and MoSx can be prepared at the ambient temperature in seconds. X-ray absorption spectroscopy (XAS) was also utilized to investigate the interaction between the organometallic precursor and the SiO2 surface. Chapter 5 will focus on the defect passivation of WSe2 films for the improvement of their electrical performance. Precursors were synthesized, and the wet chemistry method was designed for oxidation removal and vacancy healing. Raman spectroscopy was used as the express characterization method to reveal the treatment results. A promising healing reagent was screened out, and the repaired films were fabricated to field-effect transistors (FETs) for electrical measurements. The final results showed the electrical performance of the WSe2 films was improved after the convenient chemical treatment.
Show less