creator Wang, Albert Zihui An all-mode, bonding pad-oriented ESD (electrostatic discharge) protection structure, protects ICs against ESD pulses of all modes in all directions. A unique quasi-symmetrical layout design is devised to improve ESD structure. Physical symmetry and rounded layout provide uniform current and thermal distribution as well as symmetrical electrical operation characteristics. The ESD structure allows tunable triggering voltage, low holding voltage, low impedance, low leakage, fast response time and low parasitic effect. The ESD structure can easily be placed under or surrounding a bonding pad and consumes little extra silicon. The ESD structure can be implemented in commercial BiCMOS processes and is suitable for multiple-supply, mixed-signal, parasitic-sensitive RF and high-pin-count ICs. Submitted by Aric Ahrens (ahrens@iit.edu) on 2012-01-12T19:37:35Z No. of bitstreams: 1 6635931.pdf: 234603 bytes, checksum: ada6414c53ca9b94e7b00646f539f30e (MD5) Made available in DSpace on 2012-01-12T19:37:35Z (GMT). No. of bitstreams: 1 6635931.pdf: 234603 bytes, checksum: ada6414c53ca9b94e7b00646f539f30e (MD5) Previous issue date: 2003-10-21 Illinois Institute of Technology 2009-05-14 2003-10-21 6,635,931 http://hdl.handle.net/10560/2445 en United States Patent Patent reformatted digital application/pdf No Copyright - United States http://rightsstatements.org/page/NoC-US/1.0/ Open Access