creator Yuan, Yu advisor Oruklu, Erdal In this work, four standard cell libraries based on FinFET technology have been characterized and implemented. The first library uses the BSIM-CMG and PTM-MG models, which represents the common multi-gate devices. Two libraries are based on the BSIM-IMG model, operating in short-gate (corresponding to low-Vt) mode and lowpower (corresponding to high-Vt) mode separately. Synthesis and simulation of BSIMCMG based library is presented and compared to the conventional 45nm CMOS library, FreePDK45. The results show acceptable accuracy of the library based on BSIM-CMG model. For the libraries based on BSIM-IMG model, Short-Gate (SG) mode, Low-Power (LP) mode and the mixed-mode (combining both SG and LP modes) have been analyzed. The results proved that the low-power independent multi-gate FinFET can be used for leakage power reduction, just like the bulk CMOS high-Vt devices. At the end of this work, another library based on CCS model was characterized and verified, which show far better accuracy in terms of both timing and power modeling. Submitted by Erma Thomas (thomase@iit.edu) on 2016-02-19T17:43:57Z No. of bitstreams: 1 etdadmin_upload_374007.zip: 2379941 bytes, checksum: dceed6f1a626ab712fbe3ed1725febf1 (MD5) Made available in DSpace on 2016-02-19T17:43:57Z (GMT). No. of bitstreams: 1 etdadmin_upload_374007.zip: 2379941 bytes, checksum: dceed6f1a626ab712fbe3ed1725febf1 (MD5) Previous issue date: 2015-07 M.S. in Electrical Engineering, July 2015 2015 2015-07 http://hdl.handle.net/10560/3723 en FinFET Standard Cell Library Thesis born digital application/pdf In Copyright http://rightsstatements.org/page/InC/1.0/ Restricted Access ECE / Electrical and Computer Engineering Illinois Institute of Technology Affiliated department