creator Wang, Wendi advisor Shen, John Zheng Synchronous buck converter might be one of the most widely used and fabricated circuitry in the world for its favorable trade-off on many subjects. However, the ever higher operation frequency has lead to increasing power loss in power switches and imposed new challenge to MOSFET engineering. One promising alternative for the traditionally used trench MOSFET is the shield gate MOSFET. Shield gate MOSFET has superior conduction performance as well as fast switching transient response due to its Reduced Surface Electric Field (RESURF) effect. In recent years, characterization of power MOSFET has developed along with MOSFET technology itself. New Figure of Merits (FOMs) have come into people's sight as they serve as better standards to fully describe MOSFET's overall performance. Being the same case for many other device structures, this new characterizing system also puts advanced requirements to shield gate MOSFET. And one of the most crucial problems is the rather large output capacitance this structure is having. To improve the property of shield gate MOSFET and meet the requirements of new standards, several ways of structure refinement have been proposed in this work. Both shield gate MOSFET and conventional MOSFET rated at 40V have been designed and simulated in the second chapter. The outcome shows that shield gate MOSFET has superior performance in almost every respect except for its large output charge. Then new structure for COSS reduction has been introduced in the following section, with decrement of about 50% in QQS-1 being achieved. Finally, another issue that has been tackled with is the shoot through of synchronous buck converter. Equivalent circuit model for shoot through analysis is built in this section to study the effect of each parasitic element. And a p type pillar added structure has been verified as an effective way to suppress shoot through gate bounce. Submitted by Erma Thomas (thomase@iit.edu) on 2016-07-19T21:11:55Z No. of bitstreams: 1 etdadmin_upload_425211.zip: 1335760 bytes, checksum: d7e12d84a3343d67d972819dc3e77912 (MD5) Made available in DSpace on 2016-07-19T21:11:55Z (GMT). No. of bitstreams: 1 etdadmin_upload_425211.zip: 1335760 bytes, checksum: d7e12d84a3343d67d972819dc3e77912 (MD5) Previous issue date: 2016-05 M.S. in Electrical Engineering, May 2016 2016 2016-05 http://hdl.handle.net/10560/3880 en output capacitance polysilicon diode power trench MOSFET p type pillar shield gate shoot-through Thesis born digital application/pdf In Copyright http://rightsstatements.org/page/InC/1.0/ Restricted Access ECE / Electrical and Computer Engineering Illinois Institute of Technology Affiliated department