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  <titleInfo>
    <title>SYNTHESIS, PURIFICATION AND CRYSTAL GROWTH OF INDIUM IODIDE SEMICONDUCTORS</title>
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    <namePart>Bertorello, Charles</namePart>
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    <namePart>Ostrogorsky, Aleksandar G.</namePart>
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  <abstract>The indium monoiodide (InI) semiconductor is a promising candidate for Gamma-ray and X-ray radiation detector devices. The high atomic number of indium (In) and iodine (I), along with high density, give the InI detector a higher photon stopping power (attenuation coe cient) compared to germanium based detectors and comparable to that of CdT e. Based on the previous research on melt synthesis and vapor synthesis by Dr. Ostrogorsky at Rensselaer Polytechnic Institute (RPI) and Dr. Burger at Fisk University from 2006 to 2009, the present work improves the purity of indium monoiodide by demonstrating the e ciency of zone re ning of this material. A segregation coe cient study is presented based on a Glow Discharge Mass Spectrometry (GDMS) and an Instrumental Gas Analysis (IGA) analyses performed by Evans Analytical Group (EAG). Two indium monoiodide crystals were grown using the Vertical Bridgman technique and analyses done on one of the crystals shown a resistivity of 3 109 .cm which is the second highest value reported. Indium monoiodide synthesized and puri ed in this current study was used to grow several Czochralski crystals.</abstract>
  <note type="provenance">Submitted by Dana Lamparello (dlampare@iit.edu) on 2012-08-23T15:45:52Z No. of bitstreams: 2 SYNTHESIS PURIFICATION AND CRYSTAL GROWTH OF INDIUM IODIDE SEMICONDUCTORS.pdf: 43356496 bytes, checksum: 89222713f70a42e0da71a133990abf35 (MD5) Thesis front page signed.pdf: 22969 bytes, checksum: 51c8996fa2383c28925f46861adb7652 (MD5)</note>
  <note type="provenance">Made available in DSpace on 2012-08-23T15:45:52Z (GMT). No. of bitstreams: 2 SYNTHESIS PURIFICATION AND CRYSTAL GROWTH OF INDIUM IODIDE SEMICONDUCTORS.pdf: 43356496 bytes, checksum: 89222713f70a42e0da71a133990abf35 (MD5) Thesis front page signed.pdf: 22969 bytes, checksum: 51c8996fa2383c28925f46861adb7652 (MD5) Previous issue date: 2012-05</note>
  <note type="thesis">M.S. in Mechanical, Materials, and Aerospace Engineering, May 2012</note>
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    <dateCaptured>2012-04-23</dateCaptured>
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  <originInfo>
    <dateCreated keyDate="yes">2012-05</dateCreated>
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  <identifier type="hdl">http://hdl.handle.net/10560/2828</identifier>
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    <namePart>MMAE / Mechanical, Materials, and Aerospace Engineering</namePart>
    <affiliation>Illinois Institute of Technology</affiliation>
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