
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:title>Melt Growth of Indium-Iodide on Earth and in Microgravity</dc:title>
  <dc:creator>Riabov, Vladimir</dc:creator>
  <dc:subject>Engineering</dc:subject>
  <dc:subject>Crystal Growth</dc:subject>
  <dc:subject>Heat Transfer</dc:subject>
  <dc:subject>Heavy Metal Halide</dc:subject>
  <dc:subject>Materials Science</dc:subject>
  <dc:subject>Radiation Detector</dc:subject>
  <dc:subject>Solidification</dc:subject>
  <dc:description>Indium Iodide is a heavy metal halide and a wide band-gap semiconductor which has a potential for application in room temperature γ- and X-ray detectors. Its physical 
properties are similar to those of other materials used as room temperature radiation 
detectors. Over the years the technology of purification and crystal growth of InI was 
developed. Significant advances were made to improve purity, crystal structure and 
resulting electronic properties of the material. Nevertheless, the desired detector 
performance has not been achieved yet. Stress-induced crystal lattice defects resulting from 
solidification in contact with crucible are suspected to be responsible for the limited 
performance.  
Microgravity environment was previously used to study its effects on the process 
of crystal growth from the melt applied to semiconductors. It was observed that unlike on 
Earth materials can solidify without contact with the wall, when the sample is confined by 
the crucible. It was also shown that such detached solidification can drastically reduce 
stress-induced defects of the crystal lattice and improve electronic properties of the 
material. 
In this study crystal growth of InI was studied in microgravity, attempting to 
achieve detached solidification, and observe it in a transparent zone of a furnace. Partially 
detached solidification (a large free surface) has occurred in one of the samples. The 
resulting crystals were characterized by measuring their electronic properties and 
estimating the radiation detector performance of the devices manufactured using the 
crystals.</dc:description>
  <dc:contributor>Ostrogorsky, Aleksandar G.</dc:contributor>
  <dc:date>2023</dc:date>
  <dc:type>Dissertation</dc:type>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>islandora:1024339</dc:identifier>
  <dc:identifier>http://hdl.handle.net/10560/islandora:1024339</dc:identifier>
  <dc:source></dc:source>
  <dc:source>Illinois Institute of Technology</dc:source>
  <dc:source>MMAE / Mechanical, Materials, and Aerospace Engineering</dc:source>
  <dc:source></dc:source>
  <dc:language>en</dc:language>
  <dc:rights>In
                Copyright</dc:rights>
  <dc:rights>http://rightsstatements.org/page/InC/1.0/</dc:rights>
  <dc:rights>Restricted Access</dc:rights>
</oai_dc:dc>
